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MIL-PRF-19500-614 Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And HThis specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/614J
TABLE II. Group D inspection.
Pre-irradiation
Post-irradiation
Inspection
Symbol
limits
limits
Unit
1/ 2/ 3/
Method
Conditions
M, D, and R F, G, and H 4/ M, D, and R F, G, and H 4/
Min
Max
Min
Max
Min
Max
Min
Max
TC = +25°C
Subgroup 2
Steady-state
1019 VGS = 12 V,
VDS = 0
total dose
irradiation
(VGS bias)
Steady-state
1019 VGS = 0, VDS =
80 percent of
total dose
rated VDS (pre-
irradiation
(VDS bias)
irradiation)
End-point
electrical:
Breakdown
3407 VGS = 0, ID = 1
V(BR)DSS
mA, bias
voltage,
condition C
drain to
source
2N7380
100
100
100
100
V dc
2N7381
200
200
200
200
V dc
3403 VDS ≥ VGS,
Gate to
VGS(th)
2.0
4.0
2.0
4.0
2.0
4.0
1.25
4.5
V dc
source
ID = 1 mA
voltage
(threshold)
4/
Gate current
3411 VGS = 20 V,
IGSSF1
100
100
100
100
nA dc
VDS = 0 V, bias
condition C
Gate current
3411 VGS = 20 V,
IGSSR1
-100
-100
-100
-100
nA dc
VDS = 0, bias
condition C
See footnotes at end of table.
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