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MIL-PRF-19500-614 Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And HThis specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/614J
TABLE I. Group A inspection - Continued.
Inspection
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 4 - Continued.
Forward transconductance
3475
ID = ID2, VDD = 15 V dc see 4.5.1
2.5
s
gfs
Subgroup 5
Safe operating area test
3474
See figure 4, tp = 10 ms, VDS = 80
percent of rated VBR(DSS), VDS ≤
(high voltage)
200 V maximum
Electrical measurements
See table I, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
Qg(on)
2N7380
40
nC
2N7381
50
nC
Gate to source charge
Qgs
10
nC
Gate to drain charge
Qgd
2N7380
20
nC
2N7381
25
nC
di/dt ≤ 100 A/µs, VDD ≤ 50 V,
Reverse recovery time
3473
trr
ID = ID1
2N7380
275
ns
2N7381
460
ns
For sampling plan, see MIL-PRF-19500.
1/
2/
This test required for the following end-point measurements only:
Group B, subgroups 3 and 4 (JANS).
Group B, subgroups 2 and 3 (JANTXV).
Group C, subgroups 2 and 6.
Group E, subgroup 1.
11



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