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MIL-PRF-19500-614 Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And HThis specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/614J
Inches
Millimeters
Ltr
Min
Max
Min
Max
BL
.410
.430
10.41
10.92
.028
0.71
BL1
CH
.190
.200
4.83
5.08
LD
.025
.035
0.64
0.89
LL
.500
.625
12.70
15.88
LO
.120 BSC
3.05 BSC
LS
.100 BSC
2.54 BSC
MHD
.140
.150
3.56
3.81
MHO
.527
.537
13.39
13.64
TL
.645
.665
16.38
16.89
See note 4
TT
.035
.045
0.89
1.14
TW
.410
.420
10.41
10.67
Term 1
Drain
Term 2
Source
Term 3
Gate
NOTES:
1.
Dimensions are in inches.
2.
Millimeters are given for general information only.
3.
All terminals are isolated from case.
4.
This area is for the lead feed-through eyelets (configuration is optional, but will not extend beyond this
zone).
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
5.
FIGURE 1. Dimensions and configuration (TO-257AA).
3



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