MIL-PRF-19500/614J
TABLE IV. Manufacturers characterization conditions.
Sample
Manufactures
Inspection
plan
cage
Method
Conditions
69210
SEE 1/
1080
See MIL-STD-750E method 1080.0 dated 20 November 2006.
(Applicable to
See figure 5
devices with a
date code of
16 June 1998
and older)
Electrical
3 devices
measurements
2
SEE irradiation:
Fluence = 3E5 ±20 percent ions/cm
2
Flux = 2E3 to 2E4 ions/cm /sec, temperature = 25º ±5 °C
2
Surface LET = 28 MeV-cm /mg ±5%
range = 42.8 µm ±7.5%, energy = 283.3 MeV ±7.5%
2N7380
In-situ bias conditions: VDS = 100 V and VGS = -10 V
VDS = 80 V and VGS = -15 V
VDS = 60 V and VGS = -20 V
(typical 4.53 MeV/nucleon at Brookhaven National Lab Accelerator)
2N7381
In-situ bias conditions:
VDS = 190 V and VGS = 0 V
VDS = 180 V and VGS = -5 V
VDS = 170 V and VGS = -10 V
VDS = 125 V and VGS = -15 V
(nominal 4.53 MeV/nucleon at Brookhaven National Lab Accelerator)
2
Surface LET = 37 MeV-cm /mg ±5%, range = 39 µm ±5%,
energy = 305 MeV ±5%
2N7380
In-situ bias conditions: VDS = 100 V and VGS = 0 V
VDS = 90 V and VGS = -5 V
VDS = 70 V and VGS = -10 V
VDS = 50 V and VGS = -15 V
(typical 3.77 MeV/nucleon at Brookhaven National Lab Accelerator)
2N7381
In-situ bias conditions:
VDS = 100 V and VGS = -10 V
VDS = 50 V and VGS = -15 V
(typical 3.77 MeV/nucleon at Brookhaven National Lab Accelerator)
Electrical
measurements
Upon qualification, all manufacturers should provide the verification test conditions to be added to this
table.
1/ IGSSF1, IGSSR1, and IDSS1 was examined before and following SEE irradiation to determine acceptability for each
bias condition. Other test conditions in accordance with table I, subgroup 2, may be performed at the
manufacturer's option.
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