INCH-POUND
The documentation and process conversion
MIL-PRF-19500/276H
measures necessary to comply with this
22 March 2006
revision shall be completed by 22 June 2006.
SUPERSEDING
MIL-PRF-19500/276G
12 May 2005
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N2323,
2N2324, 2N2326, 2N2328, 2N2329, AND S AND U4 VERSIONS, 2N2323A, 2N2324A, 2N2326A,
2N2328A, 2N2329A, AND AS AND AU4 VERSIONS, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode
thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-39, 5) and 2 (U4).
* 1.3 Maximum ratings.
IFSM VGKM TSTG, RΘJSP RΘJC RΘJA Barometric
Type
VRM
IO
VFBXM
VRM
max
max max
pressure
TJ
(non-rep)
(1)
(2)
°C/W
°C/W
°C/W
°C
V (pk)
A dc A(pk) V (pk)
mmHg
V (pk)
V (pk)
6
15
175
75
50 (3)
50
.22
15
6
2N2323, S, U4
-65 to
75
50 (4)
2N2323A, AS, AU4 50
.22
15
6
+150
150
100 (3) .22
2N2324, S, U4
100
15
6
150
100 (4) .22
2N2324A, AS, AU4 100
15
6
300
200 (3) .22
2N2326, S, U4
200
15
6
300
200 (4) .22
2N2326A, AS, AU4 200
15
6
400
300 (3) .22
15
2N2328, S, U4
300
15
6
400
300 (4) .22
15
2N2328A, AS, AU4 300
15
6
500
400 (3) .22
15
2N2329, S, U4
400
15
6
500
400 (4) .22
15
2N2329A, AS, AU4 400
15
6
(1) This average forward current is for an ambient temperature of 80°C and 180 electrical degrees of conduction.
For other operating conditions see figure 3.
(2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 µs
after switching from the "off" (blocking) to the "on" (conducting) state. This is measured from the point where the
thyristor voltage has decayed to 90 percent of its initial blocking value.
(3) Gate connected to cathode through 1,000 ohm resistor.
(4) Gate connected to cathode through 2,000 ohm resistor.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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