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MIL-PRF-19500-276 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, And S And U4 Versions, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, And As And Au4 Versions, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/276H

* TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Limit

Unit

Symbol

Method

Conditions

Min

Max

Subgroup 4

TA = 125�C, condition B,

Exponential rate of voltage

4231

VFBX

rise

50 ohms ≤ RL ≤ 400 ohms,

C = 0.1 to 1.0 �F, repetition

rate = 60 pps, test duration =

15 seconds

dv/dt = 1.8 V/�s, R3 = 1 k ohm

2N2323, S, U4

2N2324, S, U4

2N2326, S, U4

2N2328, S, U4

2N2329, S, U4

dv/dt = 0.7 V/�s, R3 = 2 k ohm

2N2323A, AS, AU4

2N2324A, AS, AU4

2N2326A, AS, AU4

2N2328A, AS, AU4

2N2329A, AS, AU4

2N2323, U4, S, A, AU4, AS

VAA = 50 V dc

V dc

2N2324, U4, S, A, AU4, AS

VAA = 100 V dc

V dc

2N2326, U4, S, A, AU4, AS

VAA = 200 V dc

190

V dc

2N2328, U4, S, A, AU4, AS

VAA = 300 V dc

285

V dc

2N2329, U4, S, A, AU4, AS

VAA = 400 V dc

380

V dc

Forward on voltage

4226

IFM = 4 A(pk) (pulse), pulse

VFM

2.2

V (pk)

width = 8.5 ms, max; duty

cycle = 2 percent max

IHOX

Holding current

4201

Condition B, VAA = 24 V dc

2.0

mA dc

max, IF1 = 100 mA dc,

IF2 = 10 mA dc, gate trigger

source voltage = 6 V dc,

trigger pulse width = 25 �s

minimum,

R2 = 330 ohms

2N2323, S, U4

R3 = 1 k ohm

2N2324, S, U4

2N2326, S, U4

2N2328, S, U4

2N2329, S, U4

See footnotes at end of table.