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MIL-PRF-19500-276 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, And S And U4 Versions, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, And As And Au4 Versions, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/276H
4.3.1 High temperature blocking. Blocking voltage conditions are as follows: Forward blocking voltage. See
figure 4, TA = 122°C ± 3°C. t = 96 hours min.
a. VFBX = 50 V dc for 2N2323, U4, S, A, AU4, AS.
b. VFBX = 100 V dc for 2N2324, U4, S, A, AU4, AS.
c. VFBX = 200 V dc for 2N2326, U4, S, A, AU4, AS.
d. VFBX = 300 V dc for 2N2328, U4, S, A, AU4, AS.
e. VFBX = 400 V dc for 2N2329, U4, S, A, AU4, AS.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified
herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices
shall be submitted to and pass the requirements of table I, subgroups 1 and 2 inspection only (table VIb, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500, and table I herein.
* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in 4.4.2.1. Electrical measurements (end-points) shall be in accordance with the applicable steps of
table II herein.
* 4.4.2.1 Group B inspection (JAN, JANTX and JANTXV).
Step
Method
Conditions
TA = 75°C ±5°C, IO = 220 mA dc, see figure 3. No heatsink or forced air on the
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device shall be permitted.
RGK = 1 k ohm for 2N2323, S, U4, 2N2324, S, U4, 2N2326, S, U4, 2N2328, S, U4,
2N2329, S, U4.
RGK = 2 k ohm for 2N2323A, AS, AU4, 2N2324A, AS, AU4, 2N2326A, AS, AU4,
2N2328A, AS, AU4, 2N2329A, AS, AU4.
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The intermittent operation life test of step 1 shall be extended to 1,000 hours.
Group B, step 2 shall not be required more than once for any single wafer lot. 45
devices, c = 0.
RΘJA = 175°C C/W maximum (for qualification only). 22 devices, c = 0.
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