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MIL-PRF-19500-276 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, And S And U4 Versions, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, And As And Au4 Versions, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/276H
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 3 - Continued.
Gate trigger voltage
4221
VGT3
0.1
V dc
RL = 1,000 ohm; Re = 1 kΩ
2N2323, S, U4
2N2324, S, U4
2N2326, S, U4
2N2328, S, U4
2N2329, S, U4
RL = 100 ohm; Re = 2 kΩ
2N2323A, AS, AU4
2N2324A, AS, AU4
2N2326A, AS, AU4
2N2328A, AS, AU4
2N2329A, AS, AU4
2N2323, U4, S, A, AU4, AS
V2 = VFBX = 6 V dc
2N2324, U4, S, A, AU4, AS
2N2326, U4, S, A, AU4, AS
2N2328, U4, S, A, AU4, AS
2N2329, U4, S, A, AU4, AS
TA = -65°C
IRBX3
Low temperature operation:
4211
µA dc
5
Reverse blocking current
DC method, condition B
2N2323, S, U4
R2 = 1 k ohm
2N2324, S, U4
2N2326, S, U4
2N2328, S, U4
2N2329, S, U4
2N2323A, AS, AU4
R2 = 2 k ohm
2N2324A, AS, AU4
2N2326A, AS, AU4
2N2328A, AS, AU4
2N2329A, AS, AU4
VR = 50 V dc
2N2323, U4, S, A, AU4, AS
VR = 100 V dc
2N2324, U4, S, A, AU4, AS
VR = 200 V dc
2N2326, U4, S, A, AU4, AS
VR = 300 V dc
2N2328, U4, S, A, AU4, AS
2N2329, U4, S, A, AU4, AS
VR = 400 V dc
See footnotes at end of table.
12



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