MIL-PRF-19500-276 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, And S And U4 Versions, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, And As And Au4 Versions, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/276H

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before

contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

IFBX

DC forward blocking current with specified conditions applied to the gate.

DC holding current with specified conditions applied to the gate.

IHOX

IRBX

DC reverse blocking current with specified conditions applied to the gate.

RGK

External resistance between gate and cathode terminals.

VAA

Anode supply voltage (dc).

Forward blocking voltage, gate connected to the specified reference terminal.

VFBX

VGG

Gate supply voltage.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 and figure 2 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition specification (see 6.2).

3.4.2 Lead material. Where a choice of lead material is desired, it shall be specified in the acquisition document

(see 6.2).

3.4.3 Construction. These devices shall be constructed in a manner and using materials which enable the

thyristors to meet the applicable requirements of MIL-PRF-19500 and this specification.

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and tables I and II.

3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II.

3.7 Maximum test ratings and primary electrical characteristics. Test ratings for the devices specified herein shall

be as shown in 1.3 and 1.4

3.8 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.