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MIL-PRF-19500-276 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, And S And U4 Versions, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, And As And Au4 Versions, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/276H
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 2/
2071
n = 45, c = 0
Visual and mechanical
examination  3/
Solderability 3/
2026
n = 15 leads, c = 0
Resistance to solvents
1022
n = 15, c = 0
3/ 4/
Temp cycling 3/
1051
Test condition F, 25 cycles.
n = 22, c = 0
Hermetic seal
1071
n = 22, c = 0
Fine leak
Gross leak
Electrical measurements
Table I, subgroup 2
Bond strength 3/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
µA dc
Reverse blocking current
4211
DC method, condition B
IRBX1
10
2N2323, S, U4
R2 = 1 k ohm
2N2324, S, U4
2N2326, S, U4
2N2328, S, U4
2N2329, S, U4
2N2323A, AS, AU4
R2 = 2 k ohm
2N2324A, AS, AU4
2N2326A, AS, AU4
2N2328A, AS, AU4
2N2329A, AS, AU4
2N2323, U4, S, A, AU4, AS
VR = 50 V dc
2N2324, U4, S, A, AU4, AS
VR = 100 V dc
2N2326, U4, S, A, AU4, AS
VR = 200 V dc
2N2328, U4, S, A, AU4, AS
VR = 300 V dc
2N2329, U4, S, A, AU4, AS
VR = 400 V dc
See footnotes at end of table.
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