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MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/411R

TABLE II. Group D inspection and end-point limits for radiation hardness

assured JANS and JANTXV devices only.

Inspection 1/

Symbol

Limits

Unit

MIL-STD-750

Method

Condition

Min

Max

Subgroup 1

Neutron irradiation

1017

Electrical measurements

IF = 9 A dc, (pulsed see 4.5.1)

Forward voltage

4011

tp = 300 �s; 2 percent maximum

duty cycle

M, D, R, H

1N5415, 1N5415US

0.6

1.6

1N5416, 1N5416US

0.6

1.6

1N5417, 1N5417US

0.6

1.7

1N5418, 1N5418US

0.6

1.7

1N5419, 1N5419US

0.6

1.8

1N5420, 1N5420US

0.6

1.8

DC method

Reverse current,

4016

M, D, R, H

VR = 50 V

�A

1N5415, 1N5415US

1.0

VR = 100 V

�A

1N5416, 1N5416US

1.0

VR = 200 V

�A

1N5417, 1N5417US

1.0

VR = 400 V

1N5418, 1N5418US

1.0

�A

VR = 500 V

1N5419, 1N5419US

1.0

�A

1N5420, 1N5420US

1.0

VR = 600 V

�A

Subgroup 2

Total dose irradiation

1019

Electrical measurements

IF = 9 A dc (pulsed see 4.5.1)

See footnote at end of table.