MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/411R

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of

MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. Delta

measurements shall be as specified in table IV herein.

* 4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs,

resubmission shall be at the test conditions of the original sample.

Subgroup

Method

Condition

Condition A, IFSM = rated IFSM (see col. 6 of 1.3); ten surges of 8.3 ms each at

4066

1 minute intervals, superimposed on IO = 2 A dc, VRWM = rated VRWM

(see col. 3 of 1.3).

Adjust IO to achieve the required TJ, apply (see col. 5 of 1.3), VR = rated VRWM

1037

(see col. 3 of 1.3 and 4.5.3); 2,000 cycles.

IO = 3 A minimum (see col. 4 of 1.3); apply VR = rated VRWM (see col. 3 of 1.3 and

1027

4.5.3) adjust IO or TA to achieve TJ = 175�C minimum; f = 50 - 60 Hz; n = 45 c = 0.

t = 1,000 hours; TA = 55�C max. For irradiated devices, include trr as an end-point

measurement.

Peak reverse power. PRM ≥ 636 W for square wave in accordance with test

4065

method 4065 of MIL-STD-750 (PRM ≥ 1,000 W for half-sine wave). Test shall be

performed on each sublot; sampling plan n = 10, c = 0, electrical end-points, see

table I, subgroup 2 herein.

4.4.2.2 Group B inspection, appendix E, table E-VIB (JAN, JANTX and JANTXV of MIL-PRF-19500).

Subgroup

Method

Condition

1027

IO = 3A minimum (see col. 4 of 1.3) minimum; adjust IO or TA to achieve the

required TJ, apply VR = rated VRWM (see col. 3 of 1.3), f = 50 - 60 Hz (see

4.5.3.1). TA = 55�C (max). For irradiated devices, include trr as an end-point

measurement.