MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/411R

3.4.1 Lead finish. Unless otherwise specified, lead or end-cap finish shall be solderable in accordance with

MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish the maximum lead temperature is

limited to +175�C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see

3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with

high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond

shall be in accordance with the requirements of category I in MIL-PRF-19500.

3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500.

3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the

cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial

container.

3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately

for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the

cathode end may be used. No color coding will be permitted.

3.5.3 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, part number

designators, and test levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3 and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.7.1 Post-irradiation performance characteristics. The electrical performance characteristics of the RHA devices

are as specified in 4.4.4 herein.

* 3.8 Workmanship. Semiconductor devices, Diode, Silicon, Power Rectifier, Fast Recovery, shall be processed in

such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or

appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Qualification for radiation hardness assurance. Qualification inspection for radiation hardness assured JANS

and JANTXV devices shall consist of group D examinations and tests specified in table II herein.

4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.