MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/411R

TABLE IV. Delta measurements. 1/ 2/ 3/ 4/ 5/

Step

Inspection

Symbol

Limit

Unit

Method

Conditions

Min

Max

DC method

Reverse current

4016

100 percent of initial

ĆIR

VR = rated (see col. 2 of

value or 250 nA dc,

whichever is greater.

Devices which exceed the group A limits for this test shall not be accepted.

The delta measurements for group B inspection in appendix E, table E-VIA (JANS) of MIL-PRF-19500 are as

follows:

a. Subgroup 4, see table IV herein, step 1.

b. Subgroup 5, see table IV herein, step 1.

The delta measurements for group B inspection in appendix E, table E-VIB (JAN, JANTX, and JANTXV) of

MIL-PRF-19500 are as follows:

a. Subgroup 3, see table IV herein, step 1.

b. Subgroup 6, see table IV herein, step 1.

The delta measurements for group C inspection in appendix E, table E-VII (all quality levels) of

MIL-PRF-19500 are as follows:

a. Subgroup 2, see table IV herein, step 1.

b. Subgroup 6, see table IV herein, step 1.

The delta measurements for group E inspection in appendix E, table E-IX of MIL-PRF-19500 are as

follows:

a. Subgroup 1, see table IV herein, step 1.

b. Subgroup 2, see table IV herein, step 1.

c. Subgroup 10, see table IV herein, step 1.