MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/411R

TABLE III. Group E inspection (all quality levels) for qualification and requalification only.

MIL-STD-750

Inspection

Sampling plan

Method

Conditions

Subgroup 1A

45 devices

c=0

20 cycles, low temperature shall be -195�C and high

Temperature cycling (air to

1/ 1051

temperature shall be +150�C.

air)

Hermetic seal 2/

1071

Electrical measurements

See table I, subgroup 2, and table IV, herein.

Subgroup 1B

500 cycles, condition C, -65�C to +175�C.

Temperature cycling

1051

(air to air)

Hermetic seal 2/

1071

Electrical measurements

See table IV, herein.

Subgroup 2

1,000 hours, VR = VRWM (see col. 3 of 1.3).

Steady-state dc blocking

1048

life

Electrical measurements

See table I, subgroup 2, and table IV, steps 1, 2, 3,

and 4. For irradiated devices, include trr as an end-

point measurement.

Subgroup 4

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 5

22 devices

c=0

Pressure 8.0 mm.

Barometric pressure,

1001

reduced (altitude

operation)

See footnotes at end of table.