MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/411R

Symbol

Dimensions

Notes

Inches

Millimeters

Min

Max

Min

Max

.110

.180

2.79

4.57

.036

.042

0.91

1.07

.130

.260

3.30

6.60

.90

1.30

22.9

33.0

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for general information only.

3. Dimension BD shall be measured at the largest diameter.

4. The BL dimension shall include the entire body including slugs and sections of the lead over

which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the

edge of the diode body and extending .050 inch (1.27 mm) onto the leads.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions (axial lead).