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MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/411R
TABLE II. Group D inspection and end-point limits for radiation hardness
assured JANS and JANTXV devices only. - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Condition
Min
Max
Subgroup 2 - Continued
4011
Forward voltage
tp = 300 µs; 2 percent maximum
duty cycle
M, D, R. H
0.6
1.6
V
1N5415, 1N5415US
0.6
1.6
V
1N5416, 1N5416US
0.6
1.7
V
1N5417, 1N5417US
0.6
1.7
V
1N5418, 1N5418US
0.6
1.8
V
1N5419, 1N5419US
1N5420, 1N5420US
0.6
1.8
V
Reverse current
4016
DC method
IR
M, D, R, H
µA
1.0
VR = 50 V dc
1N5415, 1N5415US
µA
1.0
VR = 100 V dc
1N5416, 1N5416US
µA
1.0
VR = 200 V dc
1N5417, 1N5417US
1.0
µA
VR = 400 V dc
1N5418, 1N5418US
1.0
µA
VR = 500 V dc
1N5419, 1N5419US
1.0
1N5420, 1N5420US
VR = 600 V dc
µA
1/ For sampling plan, see MIL-PRF-19500.
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