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MIL-PRF-19500-411 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And JanshThis specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance \(RHA\) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/411R
Solve Io to Po
Average Sine Current (Io) vs Total Power (Po)
1N5420 ss411
3
2.5
2
1.5
1
Po (W) for: Model @ Tj=25C
Po (W) for: Model @ Tj=75C
0.5
Po (W) for: Model @ Tj=125C
Po (W) for: Model @ Tj=175C
0
0.00
0.50
1.00
1.50
2.00
2.50
3.00
Io (A)
FIGURE 5. Rectifier power versus Io (average forward current).
B-Pkg/E-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area
Still Air, PCB Horizontal
1000
100
1oz Foil
2oz Foil
3oz Foil
10
0.001
0.01
0.1
1
10
100
Pad Area per Pad (in2)
FIGURE 6. Thermal resistance versus pad area (for each pad) with 1 oz, 2 oz, and 3 oz copper.
20



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