For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


img
. . . .
MIL­PRF­19500/427P
* TABLE I. Group A inspection - Continued.
Symbol
Limits
Inspection 1/
Unit
Method
Conditions
Min
Max
Subgroup 6
Forward surge
4066
IFSM = 30 A (pk); ten surges of
8.3 ms each at 1 minute intervals,
superimposed on IO = 1 A
VRWM = rated (see col. 4 of 1.3.2);
TA = +55°C
See table I, subgroup 2
Electrical end-points
Subgroup 7
Not applicable
1/
For sampling plan, see MIL-PRF-19500.
*
2/
This test required for the following end-point measurements only:
Group B, subgroups 3 and 5 (JANS).
Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).
Group C, subgroup 2 and 6.
Group E, subgroup 1A and 1B.
12



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.