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MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL­PRF­19500/427P
A - version
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.047
.053
1.19
1.35
B
.007
.011
0.18
0.28
C
.033
.037
0.84
0.94
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics of the die are:
Top metal: Gold 10,000 Å minimum.
Back metal: Gold 4,000 Å minimum.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physical dimension, JANHCA and JANKCA die.
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