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MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL­PRF­19500/427P
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
Sampling
plan
Method
Conditions
Subgroup 1A
45 devices
c=0
20 cycles, except high temperature shall be 150°C and low
Temperature cycling
1051
temperature shall be -195°C.
(air to air) 1/
Hermetic seal
1071
Electrical
See table I, subgroup 2 and table III, steps 1 and 2, herein.
measurement
Subgroup 1B
45 devices
c=0
500 cycles, condition C, -65°C to +175°C.
Temperature cycling
1051
(air to air)
Hermetic seal 2/
1071
Electrical
See table I, subgroup 2 and table III, steps 1 and 2, herein.
measurement
Subgroup 2
22 devices
c=0
TA = +150°C; t = 1,000 hours +65, -0 hours; dc = 80 - 85 percent
Steady state dc
1048
blocking life
rated VRWM (see col. 4 of 1.3.2).
Electrical
See table I, subgroup 2 and table III, steps 1 and 2, herein.
measurement
Subgroup 4
Thermal impedance
curves
Subgroup 5
22 devices
c=0
Barometric pressure
1001
1N5616 and 1N5618 at 8 mm Hg.
(reduced)
1N5620 and 1N5622 at 33 mm Hg.
See footnotes at end of table.
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