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MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL­PRF­19500/427P
Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
BD
.091
.103
2.31
2.62
BL
.168
.200
4.27
5.08
ECT
.019
.028
0.48
0.71
S
.003
0.08
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions are pre-solder dip.
4. The S dimension is minimum clearance of glass body to mounting surface on
all orientations.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2.
Physical dimensions types 1N5614US, 1N5616US, 1N5618US,
1N5620US, and 1N5622US (surface mount devices).
4



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