MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL�PRF�19500/427P

Dimensions

Symbol

Notes

Inches

Millimeters

Min

Max

Min

Max

.065

.110

1.65

2.79

.130

.205

3.30

5.21

.026

.033

0.66

0.84

1.00

1.50

25.4

38.10

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimension BD shall be measured at the largest diameter.

4. The BL dimension shall include the entire body including slugs and sections of the

leads over which the diameter is uncontrolled. This uncontrolled area is defined

as the zone between the edge of the diode body and extending .050 inch (1.27

mm) onto the leads.

5. The shape of the body, within the bounds of the dimensions is optional.

6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions for axial leaded devices only.