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MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL�PRF�19500/427P
4.4.2.1 Group B inspection appendix E, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B3
4066
IFSM = rated IFSM (see col. 5 of 1.3.2); ten surges of 8.3 ms each at 1 minute
intervals, superimposed on IO = 1 A, VRWM = rated (see col. 4 of 1.3.2) TA =
+55�C.
B4
1037
IO = 1 A minimum for applicable mounting and required delta temperature in
method 1037 of MIL-STD-750; VR = VRWM (see 1.3) 2,000 cycles.
B5
1027
IO = 1 A minimum; apply VR = rated VRWM (see col. 4 of 1.3.2, 4.5.3 and 4.5.3.1)
adjust IO to achieve TJ minimum; f = 50-60 Hz; n = 45, c = 0. TA = + 55�C max.;
TJ = 175�C minimum; t = 1,000 hours.
Peak reverse power. PRM ≥ 318 W. Test shall be performed on each sublot;
B8
4065
sampling plan n = 10, c = 0, end-points, see 4.4.2.
* 4.4.2.2 Group B inspection appendix E, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
B3
1027
IO = 1A minimum (see col. 4 of 1.3.2). Adjust IO to achieve TJ = 150�C minimum;
TA = +55�C maximum, f = 50-60 Hz, apply VR = rated VRWM (see col. 4 of 1.3.2),
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points)
shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Delta measurements shall be as
specified in table III herein. Leaded samples may be used in lieu of surface mount devices (US version) for life tests.
4.4.3.1 Group C inspection appendix E, table E-VII of MIL-PRF-19500.
Subgroup
Method
Conditions
C2
2036
Axial devices - Tension: Test condition A; weight = 12 pounds; t = 15 seconds.
Lead fatigue: Test condition E; weight = 2 pounds.
C2
2036
US devices - Tension: Test condition A; weight = 12 pounds; t = 15 seconds.
Suitable fixtures may be used to pull the end-caps in a manner which does not aid
construction. Reference to axial lead may be interpreted as end-cap with fixtures
used for mounting (see figure 4 herein). (Lead fatigue is not applicable to US
diodes).
RθJL (maximum) ≤36�C/W, L= .375 inch (9.53 mm). For surface mount
C5
4081
devices (US version), RθJEC ≤ 13�C/W.
C6
1026
IO = 1 A minimum (see col. 2 of 1.3.2). Adjust IO to achieve TJ = 150�C minimum;
TA = +55�C maximum, f = 50-60 Hz; apply VR = rated VRWM (see col. 4 of 1.3.2),
C8
2031
n = 22, c = 0. One cycle.
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