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MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL­PRF­19500/427P
Axial Thermal Resistance vs FR4 Pad Area
A-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area
Still Air, PCB Horizontal
1000
100
1oz Foil
2oz Foil
3oz Foil
10
0.001
0.01
0.1
1
10
100
Pad Area (in2)
FIGURE 8. Thermal resistance versus pad area (for each pad) with 1, 2, and 3 oz copper for 1N5614 through 1N5622(US).
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