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MIL-PRF-19500-427 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL­PRF­19500/427P
Nominal Vf vs If at Temperature
1N5622 ss427
10
1
If )A)
0.1
Model @ Tj=25C
0.01
Model @ Tj=75C
Model @ Tj=125C
Model @ Tj=175C
0.001
0.30
0.50
0.70
0.90
1.10
1.30
1.50
Vf (V)
FIGURE 9. Forward voltage versus forward current for 1N5614 through 1N5622(US).
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