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MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
2071
Subgroup 1
Visual and mechanical
inspection
Subgroup 2
°C/W
Thermal impedance 2/
3101
See 4.3.1
ZθJX
Forward voltage
4011
0.8
1.6
IF = 3 A dc (pulsed), (see
VF
Vpk
4.5.1) tp = 300 µs; 2 percent
maximum duty cycle
Reverse current leakage
4016
DC method
IR1
µA
1N5615, US
0.5
VR = 200 V
µA
1N5617, US
0.5
VR = 400 V
µA
1N5619, US
0.5
VR = 600 V
µA
1N5621, US
0.5
VR = 800 V
µA
1N5623, US
0.5
VR = 1,000 V
IR = 50 µA
Breakdown voltage
4021
VBR
1N5615, US
220
V
1N5617, US
440
V
1N5619, US
660
V
1N5621, US
880
V
1N5623, US
1100
V
Subgroup 3
TA = +125°C
High temperature
operation:
Reverse current leakage
4016
DC method
IR2
µA
1N5615, US
55
VR = 200 V
µA
1N5617, US
55
VR = 400 V
µA
1N5619, US
55
VR = 600 V
µA
1N5621, US
55
VR = 800 V
µA
1N5623, US
55
VR = 1,000 V
See footnote at end of table.
12



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