MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein. The ZθJX end-point shall be derived by the supplier and approved by the qualifying activity. This ZθJX end-

point shall be documented in the qualification report.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JANTX and JANTXV) of MIL-PRF-19500,

appendix E, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2

herein. Delta measurements shall be as specified in table III herein.

* 4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs,

resubmission shall be at the test conditions of the original sample.

Subgroup

Method

Condition

0�C to +100�C, 25 cycles.

1056

-55�C to +175�C, 100 cycles.

1051

4066

Condition A, IFSM = rated IFSM (see col. 6 of 1.3); ten surges of 8.3 ms each at 1

minute intervals, superimposed on IO = 750 mA, VRWM = rated VRWM (see col. 3

of 1.3) TA = 100�C.

IO = 1 A minimum (see col. 3 of 1.3); VR = rated VRWM (see col. 2 of 1.3, 4.5.3

1037

and 4.5.3.1); 2,000 cycles.

IO = 1 A minimum (see column 3 of 1.3), apply VR = rated VRWM (see column 2 of

1027

1.3), adjust IO to achieve TJ = +175�C minimum. t = 1,000 hours, n = 45, c = 0.

Temporary leads may be added for surface mount devices. For irradiated

devices, include trr as an end-point measurement.

Peak reverse power, see table II, subgroup 8 herein. PRM ≥ 318 W for square

4065

wave in accordance with method 4065 of MIL-STD-750, (PRM ≥ 500 W for half-

sine wave). Test shall be performed on each sublot; sampling plan n = 10, c = 0,

end-points, see 4.4.2.