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MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N
B - version
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
.039
.043
1.00
1.09
B
.021
.025
0.53
0.64
C
.008
.012
0.20
0.31
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  The physical characteristics of the die are:
Top metal: Aluminum (anode) 45,000 Å minimum.
Back metal: Gold (cathode)
2,500 Å minimum.
4.  In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Physical dimensions, JANHCB and JANKCB die.
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