MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N

TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.

Inspection

Sampling plan

Method

Conditions

Subgroup 8 1/

45 devices

c=0

Peak reverse power (PRM)= shall be characterized by the

Peak reverse power

4065

supplier and this data shall be available to the

Government. Test shall be performed on each sublot.

Electrical measurements

During the PRM test, the voltage (VBR) shall be monitored

to verify it has not collapsed. Any collapse in VBR during,

or after, the PRM test, or rise in leakage current (IR) after

the test that exceeds IR1 in table I herein, shall be

considered a failure to that level of applied PRM.

Progressively higher levels of PRM shall be applied until

failure occurs on all devices within the chosen sample

size to characterize each sublot.

Subgroup 9 1/

45 devices

c=0

Step stress to destruction by increasing cycles or up to a

Resistance to glass cracking

1057

maximum of 25 cycles.

Subgroup 10

22 devices

c=0

Condition A, IFSM = rated (see col. 6 of 1.3); ten surges of

Forward surge

4066

8.3 ms each at 1 minute intervals superimposed on

IO = 750 mA; VR = VRWM = (see col. 2 of 1.3); TA =

+100�C.

Electrical measurement

See table I, subgroup 2.

1/ The sample size for this step stress requirement shall be determined by the supplier. A statistically significant

sample size is required.