MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/429N

Dimensions

Ltr

Notes

Inches

Millimeters

Min

Max

Min

Max

.065

.110

1.65

2.79

.026

.033

.66

.84

.130

.225

3.30

5.71

1.00

1.30

25.40

33.02

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimension BD shall be measured at the largest diameter.

4. Dimension BL shall include the entire body including slugs and sections of the lead over

which the diameter is uncontrolled. This uncontrolled area is defined as the zone between

the edge of the diode body and extending onto the leads .050 inch (1.27 mm)

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions (for non-US suffix devices only) (axial lead).