MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N

Dimensions

Ltr

Inches

Millimeters

Min

Max

Min

Max

.168

.200

4.27

5.08

ECT

.019

.028

0.48

0.71

.003

0.08

.091

.103

2.31

2.62

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimensions are pre-solder dip.

4. Minimum clearance of glass body to mounting surface on

all orientations.

5. In accordance with ASME Y14.5M, diameters are

equivalent to φx symbology.

FIGURE 2. Physical dimensions for types 1N5615US, 1N5617US, 1N5619US, 1N5621US,

and 1N5623US, (surface mount devices) (D-5A).