MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N

TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

Sampling plan

Method

Conditions

Subgroup 1

45 devices

c=0

Thermal shock

1056

20 cycles, condition D except low temperature shall be

achieved using liquid nitrogen (-195�C). Perform a

visual for cracked glass.

500 cycles, -65�C to +175�C.

Temperature cycling

1051

Hermetic seal

1071

Gross leak

See table I, subgroup 2, and table III, steps 1, 2.

Electrical measurements

Subgroup 2

22 devices

c=0

1,000 hours; VR = 80 � 85 percent of rated VRWM (see

Steady state dc blocking life

1048

col. 2 of 1.3).

Electrical measurements

See table I, subgroup 2 herein except for thermal

impedance and table III, step 1. For irradiated devices,

include trr as an end-point measurement.

Subgroup 4 1/

Thermal impedance curves

Subgroup 5

22 devices

c=0

Barometric pressure,

1001

Pressure 1N5617, 1N5619 = 8 mm Hg (100,000 ft);

1N5621, 1N5623 = 33 mm Hg (70,000 ft); VR = VRWM

reduced (altitude operation)

(see col. 2 of 1.3); t = 1 minute (minimum).

See footnote at end of table.