For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


. . . . . . . . . . . . . . .
MIL-PRF-19500/429N
4.4.2.2 Group B inspection, appendix E, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500).
Subgroup
Method
Condition
IO = 1 A minimum adjust IO or TA to achieve the required TJ of +150°C minimum.
B3
1027
Apply VR = rated VRWM (see col. 2 of 1.3), f = 50-60 Hz (see 4.5.3 and 4.5.3.1).
TA = 55°C (max). For irradiated devices, include trr as an end-point
measurement.
B5
Not applicable.
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500. End-point electrical measurements (end-points) shall
be in accordance with table I, subgroup 2 herein. Delta limits shall be in accordance with table III herein.
* 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500.
Subgroup
Method
Condition
0°C to +100°C, 10 cycles.
C2
1056
-55°C to +175°C, 25 cycles.
C2
1051
C2
2036
Tension: Test condition A; weight = 12 pounds; t = 30 seconds. Lead fatigue:
Test condition E; weight 1 pound. NOTE: Lead fatigue is not applicable for US
devices.
*
C2
2038
US devices ­ Tension: Test condition B; weight = 12 pounds; t = 15 seconds.
RθJL (maximum) ≤ 38°C/W; L = .375 inch (9.53 mm), (see 4.3.1).
C5
4081
For surface mount devices (US version), RθJEC ≤ 7°C/W.
IO = 1 A, minimum; adjust IO to achieve TJ = +150°C minimum. Apply VR = rated
C6
1026
VRWM (see col. 2 of 1.3), f = 50-60 Hz (see 4.5.3 and 4.5.3.1). For irradiated
devices, include trr as an end-point measurement.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein; except, ZθJX need not be performed. See table III for
delta limits when applicable.
10



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.