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MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N
Maximum Thermal Impedance
20
Design Limit
10
5
1
0.005 0.01
0.1
1
10
50
Heating Time (sec)
ZθJX = 4°C/W at 10 ms.
FIGURE 7. Thermal impedance curve RθJEC = 13°C/W for 1N5615US, 1N517US, 1N5619US,
1N5621US, and 1N5623US.
19



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