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MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N
Average Sine Current (Io) vs Total Power (Po)
1N5623 ss429
2
1.8
1.6
1.4
1.2
1
0.8
0.6
Po (W) for: Model @ Tj=25C
0.4
Po (W) for: Model @ Tj=75C
Po (W) for: Model @ Tj=125C
0.2
Po (W) for: Model @ Tj=175C
0
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
Io (A)
FIGURE 8. Rectifier power versus IO (average forward current) for 1N5615-1N5623.
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