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MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N
A-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area
Still Air, PCB Horizontal
1000
100
1oz Foil
2oz Foil
3oz Foil
10
0.001
0.01
0.1
1
10
100
Pad Area (in2)
FIGURE 9. Thermal resistance versus pad area (for each pad) with 1, 2, and 3 ounce copper for 1N5615-
1N5623.
23



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