MIL-PRF-19500-429 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

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MIL-PRF-19500/429N

Nominal Vf vs If at Temperature

1N5623 ss429

0.10

0.30

0.50

0.70

0.90

1.10

1.30

1.50

0.1

0.01

0.001

Model @ Tj=25C

Model @ Tj=75C

Model @ Tj=125C

0.0001

Model @ Tj=175C

0.00001

Vf (V)

FIGURE 10. Forward voltage versus forward current for 1N5615-1N5623.