MIL-PRF-19500-444 Semiconductor Device, Diode, Silicon, Switching, Schottky, Types 1N5711-1, 1N5711Ur-1, 1N5711Ub, 1N5711Ubca, 1N5711Ubd, 1N5711Ubcc, 1N5712-1, 1N5712Ur-1, 1N5712Ub, 1N5712Ubca, 1N5712Ubd, 1N5712Ubcc, 1N6857-1, 1N6857Ur-1, 1N6858-1, And 1N6858Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/444N

4.5.2 Effective carrier lifetime (τCL). This test shall be measured with the device installed in the test fixture, DESC

Drawing C68001 or equivalent, using the test set up shown on figure 5 herein. Adjust the signal generator to 54

MHz. Adjust the sensitivity of the oscilloscope to 5 mV/cm (1N5711), 10 mV/cm (1N6858), 20 mV/cm (1N5712), and

50 mV/cm (1N6857). With the device in the test fixture, adjust the output of the amplifier or VHF oscillator until the

peak amplitude of the forward current is 5 cm as seen on the oscilloscope (5 mA (1N5711), 10 mA (1N6858), 20 mA

(1N5712), and 50 mA (1N6857)).

FIGURE 5. Test setup for diode effective lifetime measurement.

Change the sensitivity of scope to 2 mV/cm (1N5711, 1N6858), 5 mV/cm (1N5712), or 10 mV/cm (1N6857). Under

these conditions, the effective carrier lifetime is related to the amplitude designated as "τCL" shown on figure 6. This

amplitude has the calibration of 200 ps/cm (1N5711), 100 ps/cm (1N6858), 125 ps/cm (1N5712), and 100 ps/cm

(1N6857).

FIGURE 6. Oscilloscope display in diode effective lifetime measurement.