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MIL-PRF-19500-444 Semiconductor Device, Diode, Silicon, Switching, Schottky, Types 1N5711-1, 1N5711Ur-1, 1N5711Ub, 1N5711Ubca, 1N5711Ubd, 1N5711Ubcc, 1N5712-1, 1N5712Ur-1, 1N5712Ub, 1N5712Ubca, 1N5712Ubd, 1N5712Ubcc, 1N6857-1, 1N6857Ur-1, 1N6858-1, And 1N6858Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/444N
TABLE I. Group A inspection.
MIL-STD-750
Limit
Inspection
1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
1N5711-1, all packages
°C/W
ZθJX
Thermal impedance
3101
See 4.3.3
40
Forward voltage
4011
IF = 1 mA dc
VF1
.410
V dc
Forward voltage
4011
IF = 15 mA dc
VF2
1.0
V dc
Reverse current
4016
DC method; VR = 50 Vdc
IR1
200
nA dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)1
70
V dc
1N5712-1, all packages
°C/W
ZθJX
Thermal impedance
3101
See 4.3.3
40
Forward voltage
4011
IF = 1 mA dc
VF1
.410
V dc
Forward voltage
4011
IF = 35 mA dc
VF2
1.0
V dc
Reverse current
4016
DC method; VR = 16 Vdc
IR1
150
nA dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)1
20
V dc
1N6857-1, UR-1
°C/W
ZθJX
Thermal impedance
3101
See 4.3.3
40
Forward voltage
4011
IF = 1 mA dc
VF1
.350
V dc
Forward voltage
4011
IF = 35 mA dc
VF2
.75
V dc
Reverse current
4016
DC method; VR = 16 Vdc
IR1
150
nA dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)1
20
V dc
1N6858-1, UR-1
°C/W
ZθJX
Thermal impedance
3101
See 4.3.3
40
Forward voltage
4011
IF = 1 mA dc
VF1
.360
V dc
Forward voltage
4011
IF = 15 mA dc
VF2
.65
V dc
Reverse current
4016
DC method; VR = 50 Vdc
IR1
200
nA dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)1
70
V dc
Subgroup 3
TA = +150°C
1N5711-1, all packages
High temperature operation
µA dc
Reverse current
4016
DC method; VR = 50 Vdc
IR2
200
TA = -55°C
Low temperature operation
Forward voltage
4011
IF = 1 mA dc
VF3
.55
V dc
Forward voltage
4011
IF = 15 mA dc
VF4
1.0
V dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)2
70
V dc
See footnotes at end of table.
14



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