MIL-PRF-19500/444N
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limit
Inspection
1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 3 - Continued.
TA = +150°C
1N5712-1, all packages
High temperature operation
µA dc
Reverse current
4016
DC method; VR = 16 V dc
IR2
150
TA = -55°C
Low temperature operation
Forward voltage
4011
IF = 1 mA dc
VF3
0.55
V dc
Forward voltage
4011
IF = 35 mA dc
VF4
1.0
V dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)2
20
V dc
1N6857-1, UR-1
TA = +150°C
High temperature operation
µA dc
Reverse current
4016
DC method; VR = 16 V dc
IR2
300
TA = -55°C
Low temperature operation
Forward voltage
4011
IF = 1 mA dc
VF3
.55
V dc
Forward voltage
4011
IF = 35 mA dc
VF4
1.0
V dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)2
20
V dc
TA = +150°C
1N6858-1, UR-1
High temperature operation
µA dc
Reverse current
4016
DC method; VR = 50 V dc
IR2
400
TA = -55°C
Low temperature operation
Forward voltage
4011
IF = 1 mA dc
VF3
.55
V dc
Forward voltage
4011
IF = 15 mA dc
VF4
1.0
V dc
IR = 10 µA dc
Breakdown voltage
4021
V(BR)2
70
V dc
Subgroup 4
Capacitance
4001
C
1N5711-1, 1N5712-1, and UB
Vr = 0V dc; f = 1 MHz;
2.0
pF
and UR
1N6857-1, 1N6858-1, and UR
Vsig = 50 mV(pk) maximum
4.5
pF
τCL
Effective carrier lifetime
(See DESC drawing C68001)
100
ps
(see 4.5.2) 2/
Subgroups 5, 6, and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
2/ Effective carrier lifetime needs to be performed only one time for each wafer lot.
15
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