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MIL-PRF-19500-444 Semiconductor Device, Diode, Silicon, Switching, Schottky, Types 1N5711-1, 1N5711Ur-1, 1N5711Ub, 1N5711Ubca, 1N5711Ubd, 1N5711Ubcc, 1N5712-1, 1N5712Ur-1, 1N5712Ub, 1N5712Ubca, 1N5712Ubd, 1N5712Ubcc, 1N6857-1, 1N6857Ur-1, 1N6858-1, And 1N6858Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/444N
Inches
Millimeters
Ltr
Min
Max
Min
Max
A
.004
.005
0.102
0.127
B
.0130
.0170
0.330
0.432
Inches
Millimeters
Ltr
Min
Max
Min
Max
A
.0029
.0035
0.074
0.089
B
.0130
.0170
0.330
0.432
Inches
Millimeters
Ltr
Min
Max
Min
Max
A
.0055
.0065
0.140
0.165
B
.0130
.0170
0.330
0.432
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Element evaluation accomplished utilizing TO-5 package.
3. The physical characteristics of the die are:
Metallization:
Top (anode): Al.
Back (cathode): Au.
Al thickness: 25,000 Å minimum.
Gold thickness: 4,000 Å minimum.
Chip thickness: .010 inch (0.25 mm) ±.002 inch (±0.05 mm).
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 4. Physical dimensions, die.
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