MIL-PRF-19500-444 Semiconductor Device, Diode, Silicon, Switching, Schottky, Types 1N5711-1, 1N5711Ur-1, 1N5711Ub, 1N5711Ubca, 1N5711Ubd, 1N5711Ubcc, 1N5712-1, 1N5712Ur-1, 1N5712Ub, 1N5712Ubca, 1N5712Ubd, 1N5712Ubcc, 1N6857-1, 1N6857Ur-1, 1N6858-1, And 1N6858Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/444N

* TABLE II. Group E inspection (all quality levels) - for qualification and requalification.

MIL-STD-750

Qualification

Inspection 1/

Method

Conditions

Subgroup 1

45 devices

c=0

100 cycles, -55�C to 100�C (glass diodes only)

Thermal shock

1056

500 cycles, -55�C to 150�C

Temperature cycling

1051

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

See table I, subgroup 2 (VF1, IR1 and thermal

Electrical measurements

impedance)

Subgroup 2

45 devices

c=0

Steady-state dc blocking life

1048

See 4.5.1, 1,000 hrs

See table I, subgroup 2 (VF1 and IR1)

Electrical measurements

Subgroup 4

RθJSP can be calculated but shall be measured once

Thermal resistance

3131

n = 15, c = 0

in the same package with a similar die size to confirm

calculations (may apply to multiple specification

sheets).

Thermal impedance curves

See MIL-PRF-19500, table E-IX, group E, subgroup 4.

Sample size

N/A

Subgroup 5

Not applicable

Subgroup 6

ESD testing

1020

Subgroup 9

45 devices

Resistance to glass cracking

1057

Test until failure occurs or to a maximum of 25 cycles,

whichever comes first. Not applicable for UB device.

1/ For sampling plan, see MIL-PRF-19500.