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MIL-PRF-19500-472 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL­PRF­19500/472F
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E­VIB (JAN, JANTX, and JANTXV) of MIL­PRF­19500 and as follows herein.
Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall
be in accordance with the applicable step of 4.6 herein.
Subgroup
Method
Conditions
B3
1027
For 2N6350 and 2N6352; VCE = +40 V dc.
For 2N6351 and 2N6353; VCE = +100 V dc.
Power shall be applied to achieve TJ = +150°C minimum and power dissipation of
PD ≥ 75 percent of maximum rated PT as defined in 1.3.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E­VII of MIL­PRF­19500 and as follows herein. Electrical measurements (end-points) shall
be in accordance with table I, subgroup 2 herein.
Subgroup
Method
Conditions
C2
2036
Test condition E for 2N6350 and 2N6351.
Test condition A for 2N6352 and 2N6353, weight = 3 lbs (1.36 Kg), t = 15s.
C5
3131
Base 1 shorted to base 2 (see 1.3).
C6
1026
For 2N6350 and 2N6352; VCE = +40 V dc.
For 2N6351 and 2N6353; VCE = +100 V dc.
Power shall be applied to achieve TJ = +150°C minimum and power dissipation of
PD ≥ 75 percent of maximum rated PT as defined in 1.3.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E­IX of MIL­PRF­19500 and as specified in table II herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in
accordance with the applicable step of 4.6 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse response measurements. Conditions for pulse response measurement shall be as specified in section
4.6 Delta requirements. The delta requirements for group B inspection shall be as specified below. (1) (2)
Symbol
Limit
Step
Inspection
Method
Conditions
ĆhFE2
1
Forward-current
3076
±25 percent change from
VCE = 5 V dc; IC = 5.0 A dc;
transfer ratio
initial reading.
pulsed see 4.5.1,
RB2E = 100 ohm
(1) The delta measurements for group B, product assurance levels JAN, JANTX, and JANTXV shall be as follows:
In addition to the measurements specified for subgroup 3 of table E­VIB of MIL­PRF­19500, the
measurements of step 1 herein shall also be taken.
(2) The delta measurements for group E shall be as follows: In addition to the measurements specified for
subgroups 1 and 2 of table E­IX of MIL­PRF­19500, the measurements of step 1 herein shall also be taken.
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