An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-472 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL�PRF�19500/472F

TABLE I. Group A inspection � Continued.

MIL�STD�750

Limit

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 5 � Continued.

TC = +100�C; t ≥ 1.0 s, 1 cycle;

Safe operating area

3051

tr + tf = 10 �s (see figure 7);

(continuous dc)

(for types 2N6352 and

RB2E = 100 ohms

2N6353 only)

Test 1

(2N6352, 2N6353)

VCE = 5.0 V dc; IC = 5 A dc

Test 2

(2N6352, 2N6353)

VCE = 10 V dc; IC = 2.5 A dc

Test 3

(2N6352)

VCE = 80 V dc; IC = 95 mA dc

Test 4

(2N6353)

VCE = 150 V dc; IC = 35 mA dc

Electrical measurements

See subgroup 2 of table I

Safe operating area

3053

Load condition B (clamped

(switching)

inductive load) see figure 8;

TA = + 100�C; tr + tf ≤ 1.0 �s;

duty cycle ≤ 2 percent;

tp = 8 ms (vary to obtain IC);

Rs = 0.1 Ω; RBB1 = 200 Ω;

VBB1 = 10 V dc; RBB2 = 2.2 kΩ;

VBB2 = �4 V dc; IC = 5 A dc;

VCC = 25 V dc; RL ≤ 2.5 Ω;

L = 40 mH (Triad c-48U, or

equivalent); RB2E = 100 Ω

2N6350, 2N6352

Clamp voltage = 50 +0, �5 V dc

2N6351, 2N6353

Clamp voltage = 90 +0, �5 V dc

Electrical measurements

See subgroup 2 of table I

For sampling plan, see MIL�PRF�19500.

This test required for the following end-point measurements only:

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroup 2 and 6.

Group E, subgroup 1.