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MIL-PRF-19500-472 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL­PRF­19500/472F
4.2.1 Qualification of unencapsulated die. Qualification inspection for unencapsulated die shall be in accordance
with appendix G of MIL­PRF­19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case
qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II
tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first
inspection lot of this revision to maintain qualification.
4.3 Screening.
4.3.1 Screening of packaged devices (JANTX and JANTXV levels only). Screening of packaged devices shall be
in accordance with table E­IV of MIL­PRF­19500, and as specified herein. The following measurements shall be
made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see table E­IV
JANTX and JANTXV levels only
3c (1)
Thermal impedance, see 4.3.1.1
11
ICEX1 and hFE1
12
See 4.3.1.2
13
See table I, subgroup 2 herein
ĆICEX1 = ±100 percent of initial value or 20 nA dc, whichever is greater
ĆhFE1 = ±25 percent of initial value
(1) This test shall be performed anytime after temperature cycling, screen 3a, and does not need to be repeated
in screening requirements.
4.3.1.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test
method 3131 of MIL­STD­750 using the guidelines in that test method for determining IM, IH, tH, tSW, (and VH where
appropriate). Measurement delay time (tMD) = 70 µs maximum. The thermal impedance limit used in screen 3c and
table I, subgroup 2 herein shall be set statistically by the supplier. See table II, subgroup 4 herein.
4.3.1.2 Power burn-in conditions. Power burn-in conditions shall be as follows: TA = +25°C; power shall be
applied to achieve TJ = +135°C minimum and power dissipation of PD ≥ 75 percent of maximum rated PT as defined in
1.3. The following details shall apply:
a.
VCE = 60 V dc for device types 2N6350 and 2N6352.
b.
VCE = 100 V dc for device types 2N6351 and 2N6353.
4.3.2 Screening of unencapsulated die (JANHC). Screening of JANHC unencapsulated die shall be in accordance
with appendix G of MIL­PRF­19500. The burn-in duration for JANHC level shall follow the JANTX requirements of
table E­IV of MIL­PRF­19500.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL­PRF­19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E­V of
MIL­PRF­19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I,
subgroup 2 herein.
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