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MIL-PRF-19500-472 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/472F

TABLE I. Group A inspection � Continued.

MIL�STD�750

Limit

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 2 � Continued.

Forward-current

3076

VCE = 5 V dc; IC = 5.0 A dc;

hFE2

transfer rato

pulsed (see 4.5.1);

RB2E = 100 ohms

2N6350, 2N6352

2,000

10,000

2N6351, 2N6353

1,000

10,000

Forward-current

3076

VCE = 5 V dc; IC = 10 A dc;

hFE3

transfer ratio

pulsed (see 4.5.1);

RB2E = 100 ohms

2N6350, 2N6352

400

2N6351, 2N6353

200

Subgroup 3

TA = +150�C

High temperature operation:

Collector to emitter

3041

Bias condition A,

ICEX2

cutoff current

VEB1 = 2 V dc; RB2E = 100 ohms

2N6350, 2N6352

1.0

mA dc

VCE = 80 V dc

2N6351, 2N6353

1.0

mA dc

VCE = 150 V dc

TA = �65�C

Low temperature operation:

Forward-current

3076

VCE = 5 V dc; IC = 5.0 A dc;

hFE4

transfer ratio

pulsed (see 4.5.1);

RB2E = 100 ohms

2N6350, 2N6352

400

2N6351, 2N6353

200

Subgroup 4

Small-signal, short-circuit

3306

VCE = 10 V dc; IC = 1.0 A dc;

|hfe|

forward-current transfer ratio

f = 10 MHz; RB2E = 100 ohms

VCB1 = 10 V dc; 100 kHz ≤ f ≤ 1

Open-circuit output

3236

120

Cobo

capacitance

MHz; base 2 open

See footnotes at end of table.