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MIL-PRF-19500-472 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/472F

TABLE I. Group A inspection.

MIL�STD�750

Limit

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

Thermal impedance 2/

3131

See 4.3.1

�C/W

ZθJX

Collector to emitter

3011

Bias condition B, IC = 25 mA dc;

V(BR)CER

breakdown voltage

pulsed (see 4.5.1);

RB1E = 2.2 k ohm; RB2E = 100 ohms

2N6350, 2N6352

V dc

2N6351, 2N6353

150

V dc

Emitter to base 1,

3026

V dc

Bias condition D, IE = 12 mA dc;

V(BR)EBO1

breakdown voltage

base 2 open

Emitter to base 2,

3026

V dc

Bias condition D, IE = 12 mA dc;

V(BR)EBO2

breakdown voltage

base 1 open

Collector to emitter

3041

Bias condition A, VEB1 = 2 V dc;

ICEX1

cutoff current

RB2E = 100 ohms

�A dc

2N6350, 2N6352

1.0

VCE = 80 V dc

�A dc

2N6351, 2N6353

1.0

VCE = 150 V dc

Saturation voltage

3071

IC = 5.0 A dc; RB2E = 100 ohms

VCE(sat)1

and resistance

2N6350, 2N6352

1.5

V dc

IB = 5 mA dc; pulsed (see 4.5.1)

2N6351, 2N6353

2.5

V dc

IB = 10 mA dc; pulsed (see 4.5.1)

Base emitter voltage

3066

2.5

V dc

VCE = 5 V dc; IC = 5.0 A dc;

VBE(on)1

(nonsaturated)

pulsed (see 4.5.1);

RB2E = 100 ohms

Forward-current

3076

VCE = 5 V dc; IC = 1.0 A dc;

hFE1

transfer ratio

pulsed (see 4.5.1);

RB2E = 1 k ohms

2N6350, 2N6352

2,000

2N6351, 2N6353

1,000

See footnotes at end of table.