MIL-PRF-19500-472 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/472F

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL�PRF�19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

IM = The measurement current applied to forward bias the junction for measurement of VBE.

IH = The collector current applied to the device under test during the heating period.

tH = The duration of the applied heating power pulse.

tSW = Sample window time during which final VBE measurement is made.

3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be

as specified in MIL�PRF�19500 and figure 1 (TO�33) for device types 2N6350 and 2N6351, figure 2 (3-pin TO�66)

for device types 2N6352 and 2N6353, and figure 3 for unencapsulated die JANHC herein.

3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL�STD�750,

MIL�PRF�19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the

acquisition document (see 6.2).

3.4.2 Polarity. The polarity of the device types shall be as shown on figures 1, 2, and 3. For device types 2N6350

and 2N6351 (TO�33), terminal 1 is the emitter, terminal 2 is base (B2), terminal 3 is base (B1), and terminal 4 is the

collector. The collector shall be also electrically connected to the case. For device types 2N6352 and 2N6353 (3 pin

TO�66), terminal 1 is the emitter, terminal 2 is base (B1), terminal 3 is base (B2), and the collector shall be electrically

connected to the case. The connections for unencapsulated die shall be as depicted on figure 3.

3.5 Marking. Marking shall be in accordance with MIL�PRF�19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL�PRF�19500, and as

specified herein.