MIL-PRF-19500-472 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/472F

TABLE II. Group E inspection (all quality levels) � for qualification and requalification only.

MIL�STD�750

Inspection

Sample plan

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

End-point electrical

See table I, subgroup 2 and 4.6 herein.

measurements

Subgroup 2

45 devices

c=0

Intermittent operation life

1037

VCB = 10 V dc, 6,000 cycles.

End-point electrical

See table I, subgroup 2 and 4.6 herein.

measurements

Subgroup 4

Sample size N/A

Thermal impedance curves

See MIL�PRF�19500.

Subgroup 6

11 devices

Electrostatic discharge

1020

Testing not required for devices listed as class 3.

sensitivity

Testing required for non-sensitive listing to prove

capability.

Subgroup 8

45 devices

c=0

Reverse voltage leakage

1033

Condition B.

stability